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For the Inventor, By the Inventor

Fukushima, Japan

Izumi Fusegawa

USPTO Granted Patents = 47 


Average Co-Inventor Count = 3.6

ph-index = 10

Forward Citations = 319(Granted Patents)


Location History:

  • Annaka, JP (1992 - 1994)
  • Gunma, JP (1990 - 1995)
  • Gunma-ken, JP (1996 - 1998)
  • Fukushima-ken, JP (1998 - 2000)
  • Fukushima, JP (1996 - 2012)
  • Nishishirakawa, JP (1998 - 2016)
  • Nishishirakawa-gun, JP (2002 - 2016)
  • Nishigo-mura, JP (2002 - 2018)

Company Filing History:

goldMedal47 out of 1,099 
 
Shin-etsu Handotai Co., Ltd.
 patents

Years Active: 1990-2018

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Areas of Expertise:
Silicon Single Crystal
Epitaxial Wafer
Quartz Glass Crucible
Silicon Wafer
P-Doped Silicon
SOI Wafer
Graphite Heater
Single Crystal Pulling
Semiconductor Device Fabrication
Heat Treatment
Czochralski Crystal Growing
Electrical Properties Testing
47 patents (USPTO):Explore Patents
1. 9938634 - Method of producing silicon single crystal (2018-04-10),
2. 9425345 - Epitaxial wafer and manufacturing method thereof (2016-08-23),
3. 9376336 - Quartz glass crucible, method for producing the same, and method for producing silicon single crystal (2016-06-28),
4. 9337013 - Silicon wafer and method for producing the same (2016-05-10),
5. 8147611 - Method of manufacturing single crystal (2012-04-03),
6. 8085985 - Method for determining distance between reference member and melt surface, method for controlling location of melt surface using the same, and apparatus for production silicon single crystal (2011-12-27),
7. 7909930 - Method for producing a silicon single crystal and a silicon single crystal (2011-03-22),
8. 7407866 - Soi wafer and a method for producing the same (2008-08-05),
9. 7326395 - Method for producing a single crystal and silicon single crystal wafer (2008-02-05),
10. 7294196 - Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single crystal (2007-11-13),
11. 7258744 - Graphite heater for producing single crystal, apparatus for producing single crystal, and method for producing single crystal (2007-08-21),
12. 7226507 - Method for producing single crystal and single crystal (2007-06-05),
13. 7214268 - Method of producing P-doped silicon single crystal and P-doped N-type silicon single crystal wafer (2007-05-08),
14. 7179330 - Method of manufacturing silicon single crystal, silicon single crystal and silicon wafer (2007-02-20),
15. 7129123 - SOI wafer and a method for producing an SOI wafer (2006-10-31),

Title: Izumi Fusegawa - Pioneering Female Inventor from Fukushima

Introduction: Izumi Fusegawa is a trailblazing inventor hailing from Fukushima, Japan. She has made significant contributions to the field of innovation with her groundbreaking ideas and inventions.

Latest Patents: Izumi Fusegawa holds several patents in various technological fields, including renewable energy, healthcare devices, and sustainable materials. Her innovative solutions have garnered attention worldwide.

Career Highlights: Throughout her illustrious career, Izumi Fusegawa has been recognized for her creativity and ingenuity. She has received numerous awards for her inventions, showcasing her dedication to pushing the boundaries of technology.

Collaborations: Izumi Fusegawa has collaborated with leading research institutions, universities, and companies to further develop and commercialize her inventions. Her partnerships have been instrumental in bringing her ideas to life and making a positive impact on society.

Conclusion: Izumi Fusegawa's passion for innovation and her relentless pursuit of excellence have solidified her reputation as a pioneering female inventor. Her contributions to the world of technology continue to inspire future generations of inventors.

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