The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Apr. 27, 2006
Masahiro Sakurada, Fukushima, JP;
Izumi Fusegawa, Fukushima, JP;
Masahiro Sakurada, Fukushima, JP;
Izumi Fusegawa, Fukushima, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A method of manufacturing a single crystal based on a Czochralski method of applying a horizontal magnetic field, wherein the single crystal is pulled in such a manner that a radial magnetic field intensity gradient ΔBr/ΔRc in a direction connecting central points of magnetic field generation coils exceeds 5.5 (Gauss/mm) and becomes 10 (Gauss/mm) or below where an origin O is a central part of the single crystal on a solid-liquid interface, ΔBr (Gauss) is a variation in a magnetic field intensity from the origin O to a crucible inner wall on a surface of a melt, and ΔRc (mm) is a radial distance from the origin O to the crucible inner wall on the surface of the melt.