The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Mar. 28, 2014
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Masahiro Sakurada, Annaka, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
A silicon epitaxial wafer including: a second intermediate epitaxial layer on a silicon substrate produced by being cut from a silicon single crystal ingot grown by the CZ method so as to have a carbon concentration ranging from 3×10to 2×10atoms/cm, a first intermediate epitaxial layer doped with a dopant, and an epitaxial layer of a device forming region stacked on the first intermediate epitaxial layer, and to a method of producing this wafer. Also providing an industrially excellent silicon epitaxial wafer that is produced with a silicon substrate doped with carbon and used as a semiconductor device substrate such as a memory, a logic, or a solid-state image sensor, and a method of producing this silicon epitaxial wafer.