The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2008
Filed:
May. 28, 2004
Masahiro Sakurada, Fukushima, JP;
Makoto Iida, Fukushima, JP;
Nobuaki Mitamura, Fukushima, JP;
Atsushi Ozaki, Fukushima, JP;
Masahiro Sakurada, Fukushima, JP;
Makoto Iida, Fukushima, JP;
Nobuaki Mitamura, Fukushima, JP;
Atsushi Ozaki, Fukushima, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A method for producing a single crystal in which when the single crystal is grown by Czochralski method, V/G is controlled by controlling a fluctuation of a temperature gradient G of the crystal which is being pulled without lowering a pulling rate V, thereby the single crystal including a desired defect region over a whole plane in a radial direction of the crystal entirely in a direction of the crystal growth axis can be produced effectively for a short time at a high yield.