The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2022

Filed:

Jul. 27, 2018
Applicant:

Shin-etsu Handotai Co., Ltd., Tokyo, JP;

Inventors:

Masahiro Sakurada, Annaka, JP;

Makoto Kobayashi, Annaka, JP;

Takeshi Kobayashi, Annaka, JP;

Koichi Kanaya, Nishigo-mura, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G01N 21/95 (2006.01); B24B 9/06 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
G01N 21/9503 (2013.01); B24B 9/065 (2013.01); H01L 21/02021 (2013.01); H01L 22/12 (2013.01);
Abstract

A method evaluates an edge shape of a silicon wafer, in which as shape parameters in a wafer cross section, when defining a radial direction reference L, a radial direction reference L, an intersection point P, a height reference plane L, h[μm], h[μm], a point Px, a straight line Lx, an angle θx, a point Px, δ [μm], a point Px, and a radius Rx [μm], the edge shape of the silicon wafer is measured, values of the shape parameters h, h, and δ are set, the shape parameters Rx and θx are calculated in accordance with the definition based on measurement data of the edge shape, and the edge shape of the silicon wafer is determined from the calculated Rx and θx to be evaluated. Consequently, a method evaluates an edge shape of a silicon wafer capable of preventing an occurrence of trouble.


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