Aizuwakamatsu, Japan

Masahiko Higashi

This inventor holds 19 USPTO granted patents and 1 published patent application, primarily in Semiconductor Fabrication. Top assignees: Spansion LLC., Fujitsu Amd Semiconductor Limited. Active years: 2006-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masahiko Higashi. Retrieved from https://idiyas.com/inventor/masahiko-higashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 19 

% Patents Active = 68.4

Average Co-Inventor Count = 1.7

ph-index = 3

Forward Citations = 90(Granted Patents)


Location History:

  • Fukushima-Ken, JP (2010 - 2014)
  • Aizuwakamatsu, JP (2006 - 2015)

Company Filing History:


Years Active: 2006-2015

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Areas of Expertise:
Semiconductor Device
Flash Memory
SONOS Device
Mirror Bit Memory
Fabrication Method
Plasma Discharge
Laminated Conductor
Transistor Breakdown
Insulating Storage Layer
ONOS Film
Electronic Conductor
Bit Line
19 patents (USPTO):Explore Patents

Title: Masahiko Higashi: Innovator in Semiconductor Technology

Introduction

Masahiko Higashi is a distinguished inventor from Aizuwakamatsu, Japan, known for his significant contributions to semiconductor technology. With a remarkable portfolio of 19 patents, Higashi has established himself as a leading figure in the field, developing innovative solutions that enhance the performance and efficiency of semiconductor devices.

Latest Patents

Higashi's recent innovations include a patented semiconductor device and method of fabrication that employs a SONOS type memory architecture. This memory device features a bit line diffusion layer constructed within a shallow trench groove, where a conductive film is buried. This design reduces the resistivity of the bit line diffusion layer without increasing the surface area of the semiconductor substrate, thus allowing the fabrication of semiconductor memory devices with stable electrical characteristics without enlarging the cell area. Additionally, he has developed methods and structures for discharging plasma formed during the fabrication of semiconductor devices. This invention details a semiconductor device comprising a wordline, a common ground line, and a fuse structure that electrically couples the wordline and common ground line until a break signal is applied via the fuse structure.

Career Highlights

Over the course of his career, Higashi has made significant contributions while working with reputable companies in the semiconductor industry. He has been associated with Spansion LLC and Fujitsu AMD Semiconductor Limited, where he contributed to the development of cutting-edge technologies that have had a major impact on the semiconductor market.

Collaborations

Throughout his extensive career, Higashi has collaborated with talented professionals in the industry, including Hiroyuki Nansei and Yukihiro Utsuno. Their joint efforts have led to innovative advancements in semiconductor technology, showcasing the importance of teamwork and collaboration in driving innovation.

Conclusion

Masahiko Higashi has emerged as a key figure in the semiconductor industry, with his innovative patents reflecting a commitment to advancing technology. His work exemplifies the spirit of innovation that drives the semiconductor industry forward, paving the way for more efficient and high-performing devices in the future. Higashi's contributions will undoubtedly leave a lasting impact on the field, inspiring future inventors to continue pushing the boundaries of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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