The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
Sep. 22, 2008
Applicants:
Hiroshi Murai, Fukushima-ken, JP;
Masahiko Higashi, Fukushima-Ken, JP;
Inventors:
Hiroshi Murai, Fukushima-ken, JP;
Masahiko Higashi, Fukushima-Ken, JP;
Assignee:
Spansion LLC, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides a semiconductor device and a method for manufacturing thereof. The semiconductor device includes bit lines disposed in a semiconductor substrate, a first ONO disposed between the bit lines on the semiconductor substrate, and a second ONO film disposed on each of the bit lines. The film thickness of a first silicon nitride film in the first ONO film is larger than the film thickness of a second silicon nitride film in the second ONO film.