The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2009
Filed:
Feb. 23, 2006
Masahiko Higashi, Aizuwakamatsu, JP;
Masahiko Higashi, Aizuwakamatsu, JP;
Spansion LLC, Sunnyvale, CA (US);
Abstract
The present invention relates to a semiconductor device that includes a semiconductor substrate () having source/drain diffusion regions () formed therein and control gates () formed thereon, with grooves () being formed on the surface of the semiconductor substrate () and being located below the control gates () and between the source/drain diffusion regions (). The grooves () are separated from the source/drain diffusion regions (), thereby increasing the effective channel length to maintain a constant channel length for charge accumulation while enabling the manufacture of smaller memory cells. The present invention also provides a method of manufacturing the semiconductor device.