The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2009
Filed:
Apr. 27, 2006
Hiroaki Kouketsu, Aizuwakamatsu, JP;
Masahiko Higashi, Aizuwakamatsu, JP;
Hiroaki Kouketsu, Aizuwakamatsu, JP;
Masahiko Higashi, Aizuwakamatsu, JP;
Spansion LLC, Sunnyvale, CA (US);
Abstract
A semiconductor device is provided which includes a gate electrode () provided on a semiconductor substrate (), an oxide/nitride/oxide (ONO) film () that is formed between the gate electrode () and the semiconductor substrate () and has a charge storage region () under the gate electrode (), and a bit line () that is buried in the semiconductor substrate () and includes a low concentration diffusion region (), a high concentration diffusion region () that is formed in the center of the low concentration diffusion region () and has a higher impurity concentration than the low concentration region, a source region, and a drain region. The semiconductor device can improve the source-drain breakdown voltage of the transistor while suppressing fluctuation of electrical characteristics or junction current between the bit line () and the semiconductor substrate ().