The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Nov. 06, 2008
Applicant:
Masahiko Higashi, Fukushima-Ken, JP;
Inventor:
Masahiko Higashi, Fukushima-Ken, JP;
Assignee:
Spansion LLC, Sunnyvale, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A device and method employing a polyoxide-based charge trapping component. A charge trapping component is patterned by etching a layered stack that includes a tunneling layer positioned on a substrate, a charge trapping layer positioned on the tunneling layer, and an amorphous silicon layer positioned on the charge trapping layer. An oxidation process grows a gate oxide layer from the substrate and converts the amorphous silicon layer into a polyoxide layer.
Higashi, Masahiko. (2013). Fabricating method of mirror bit memory device having split ono film with top oxide film formed by oxidation process (U.S. Patent No. 8404549). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8404549
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile