The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2012

Filed:

Oct. 26, 2010
Applicants:

Naofumi Takahata, Fukushima-Ken, JP;

Masahiko Higashi, Fukushima-Ken, JP;

Yukihiro Utsuno, Fukushima-Ken, JP;

Inventors:

Naofumi Takahata, Fukushima-Ken, JP;

Masahiko Higashi, Fukushima-Ken, JP;

Yukihiro Utsuno, Fukushima-Ken, JP;

Assignee:

Spansion, LLC, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a semiconductor device, the method including: forming a bit line in a semiconductor substrate; forming a plurality of word lines which intersect with the bit line at predetermined intervals on the semiconductor substrate; eliminating a portion of the plurality of word lines; forming an interlayer insulating film on the semiconductor substrate; and forming a metal plug which penetrates through the interlayer insulating film and is coupled to the bit line in a region where the portion of the plurality of word lines was eliminated.


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