Location History:
- Aizawakamatsu, JP (2006)
- Aizuwakamatsu, JP (2007 - 2016)
- Fukushima-Ken, JP (2010 - 2016)
Company Filing History:
Years Active: 2006-2016
Title: Innovations of Yukihiro Utsuno
Introduction
Yukihiro Utsuno is a prominent inventor based in Fukushima-ken, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 17 patents. His work has been instrumental in advancing the design and manufacturing processes of semiconductor devices.
Latest Patents
Utsuno's latest patents include a semiconductor device and a method for manufacturing it. This semiconductor device features bit lines integrated into a semiconductor substrate, along with an ONO film composed of a tunnel oxide film, a trap layer, and a top oxide film. The oxide film is strategically placed on the surface of the semiconductor substrate, ensuring its thickness is greater than the combined thickness of the tunnel oxide film and the top oxide film, yet less than that of the ONO film. Another notable patent involves a method for fabricating a semiconductor device, where a silicon nitride film serves as a second hard mask. This film is dry etched for complete removal, allowing for the formation of floating gates in adjacent cells and the creation of a step portion of polysilicon.
Career Highlights
Throughout his career, Utsuno has worked with notable companies such as Spansion LLC and Cypress Semiconductor Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.
Collaborations
Utsuno has collaborated with esteemed colleagues, including Masahiko Higashi and Manabu Nakamura. These partnerships have fostered a collaborative environment that has led to significant advancements in their field.
Conclusion
Yukihiro Utsuno's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His innovative approaches continue to influence the development of advanced semiconductor devices.