The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2008
Filed:
Jul. 23, 2007
Masahiko Higashi, Aizuwakamatsu, JP;
Manabu Nakamura, Aizuwakamatsu, JP;
Kentaro Sera, Aizuwakamatsu, JP;
Hiroyuki Nansei, Aizuwakamatsu, JP;
Yukihiro Utsuno, Aizuwakamatsu, JP;
Hideo Takagi, Aizuwakamatsu, JP;
Tatsuya Kajita, Aizuwakamatsu, JP;
Masahiko Higashi, Aizuwakamatsu, JP;
Manabu Nakamura, Aizuwakamatsu, JP;
Kentaro Sera, Aizuwakamatsu, JP;
Hiroyuki Nansei, Aizuwakamatsu, JP;
Yukihiro Utsuno, Aizuwakamatsu, JP;
Hideo Takagi, Aizuwakamatsu, JP;
Tatsuya Kajita, Aizuwakamatsu, JP;
Spansion LLC., Sunnyvale, CA (US);
Abstract
After an ONO film in which a silicon nitride film () formed by a plasma nitriding method using a plasma processor having a radial line slot antenna is sandwiched by silicon oxide films (), (), a bit line diffusion layer () is formed in a memory cell array region () by an ion implantation as a resist pattern () taken as a mask, then lattice defects are given to the silicon nitride film () by a further ion implantation. Accordingly, a highly reliable semiconductor memory device can be realized, in which a high quality nitride film is formed in a low temperature condition, in addition, the nitride film can be used as a charge trap film having a charge capture function sufficiently adaptable for a miniaturization and a high integration which are recent demands.