The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2015

Filed:

Mar. 14, 2008
Applicants:

Yukio Hayakawa, Aizuwakamatsu, JP;

Yukihiro Utsuno, Aizuwakamatsu, JP;

Inventors:

Yukio Hayakawa, Aizuwakamatsu, JP;

Yukihiro Utsuno, Aizuwakamatsu, JP;

Assignee:

Spansion LLC, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 27/115 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/511 (2013.01); H01L 21/28282 (2013.01); H01L 27/115 (2013.01); H01L 27/11568 (2013.01); H01L 29/42352 (2013.01); H01L 29/7923 (2013.01);
Abstract

A semiconductor device includes bit lines provided in a semiconductor substrate; an ONO film that is provided along the surface of the semiconductor substrate and is made of a tunnel oxide film, a trap layer, and a top oxide film; and an oxide film that is provided on the surface of the semiconductor substrate in the middle between the bit lines and contacts the side face of the ONO film, in which the film thickness of the oxide film is larger than the sum of the thicknesses of the tunnel oxide film and the top oxide film, and smaller than the thickness of the ONO film.


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