Fukushima, Japan

Yukio Hayakawa

This inventor holds 20 USPTO granted patents and 1 published patent application, primarily in Semiconductor Devices. Top assignees: Spansion LLC., Cypress Semiconductor Corporation, Monterey Research, LLC. Active years: 2005-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yukio Hayakawa. Retrieved from https://idiyas.com/inventor/yukio-hayakawa-ef6umbol

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 20 

% Patents Active = 90.0

Average Co-Inventor Count = 1.6

ph-index = 2

Forward Citations = 17(Granted Patents)


Location History:

  • Aizuwakamatsu, JP (2005 - 2017)
  • Fukushima-Ken, JP (2011 - 2019)

Company Filing History:


Years Active: 2005-2019

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Areas of Expertise:
Thin-Film Transistor
Semiconductor Device
Memory Cell System
Fabrication Method
Charge Trap
Element Separation
Voltage Applying Unit
Non-Volatile Memory
Storage Regions
SOI Substrate
Control Method
Trench Technology
20 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Yukio Hayakawa

Introduction: Yukio Hayakawa, an accomplished inventor from Fukushima-ken, Japan, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 20 patents, his work reflects a commitment to enhancing storage capacity and device efficiency in semiconductor devices.

Latest Patents: Hayakawa's latest patents showcase innovative developments in semiconductor architecture. One notable invention is the "Convex shaped thin-film transistor device having an elongated channel over insulating layer in a groove of a semiconductor substrate." This invention allows for a shorter distance between bit lines, thereby facilitating higher storage capacity and density. The design incorporates first bit lines on a substrate, an insulating layer positioned within a groove, channel layers connected to the first bit lines, and charge storage layers designed for optimal performance.

Another significant patent is the "Semiconductor device having element separation region formed from a recess-free trench." This method of manufacturing a semiconductor device includes the formation of a silicon nitride film and a silicon oxide film, followed by etching to create a sidewall. A trench is then formed on the semiconductor substrate, promoting effective element separation and enhancing device reliability.

Career Highlights: Hayakawa's career includes pivotal roles in influential companies in the semiconductor industry. He has worked at Spansion LLC and Cypress Semiconductor Corporation, where he has significantly impacted product development and innovation.

Collaborations: Throughout his career, Yukio Hayakawa has collaborated with esteemed colleagues, including Hiroyuki Nansei and Fumihiko Inoue. These collaborations have fostered a creative and innovative atmosphere, further enhancing the potential for groundbreaking advancements in semiconductor technology.

Conclusion: Yukio Hayakawa exemplifies the spirit of innovation in the semiconductor field. His contributions and patented inventions demonstrate a forward-thinking approach to technology, potentially shaping the future of electronic devices. His work continues to inspire current and future inventors in the pursuit of technological excellence.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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