The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2017

Filed:

Jan. 05, 2016
Applicant:

Monterey Research, Llc, Santa Clara, CA (US);

Inventors:

Yukio Hayakawa, Aizuwakamatsu, JP;

Hiroyuki Nansei, Aizuwakamatsu, JP;

Assignee:

MONTEREY RESEARCH, LLC, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/11517 (2017.01); H01L 21/28 (2006.01); H01L 27/11521 (2017.01); H01L 27/11568 (2017.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H01L 23/528 (2006.01); H01L 27/11563 (2017.01); H01L 21/84 (2006.01); H01L 27/11556 (2017.01); H01L 27/12 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11517 (2013.01); H01L 21/28273 (2013.01); H01L 21/28282 (2013.01); H01L 23/5283 (2013.01); H01L 27/115 (2013.01); H01L 27/11521 (2013.01); H01L 27/11563 (2013.01); H01L 27/11568 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 29/788 (2013.01); H01L 29/7881 (2013.01); H01L 29/792 (2013.01); H01L 29/7926 (2013.01); H01L 21/84 (2013.01); H01L 27/11556 (2013.01); H01L 27/1203 (2013.01); H01L 29/42332 (2013.01); H01L 29/42348 (2013.01); H01L 29/66757 (2013.01); H01L 2924/0002 (2013.01);
Abstract

The present invention provides a semiconductor device that has a shorter distance between the bit lines and easily achieves higher storage capacity and density. The semiconductor device includes: first bit lines and an insulating layer that is provided between the first bit lines and in a groove. First faces of the first bit lines are aligned on a first line and second faces of the first bit lines are aligned on a second line. A first face of the insulating layer is disposed at a third line that is a first distance from the first line in a first direction and a second face of the insulating layer is disposed at a fourth line that is a second distance from the second line in a second direction.


Find Patent Forward Citations

Hayakawa, Yukio. (2017). Convex shaped thin-film transistor device having elongated channel over insulating layer in a groove of a semiconductor substrate (U.S. Patent No. 9748254). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9748254

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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