Fukushima-ken, Japan

Naofumi Takahata

USPTO Granted Patents = 2 

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2010-2012

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2 patents (USPTO):Explore Patents

Title: Naofumi Takahata: Innovator in Semiconductor Technology

Introduction

Naofumi Takahata is a prominent inventor based in Fukushima-ken, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on advancements in flash memory devices, showcasing his expertise and innovative spirit.

Latest Patents

Takahata's latest patents include a flash memory device with word lines of uniform width and a method for manufacturing thereof. This method involves forming a bit line in a semiconductor substrate, creating a plurality of word lines that intersect with the bit line at predetermined intervals, and eliminating a portion of these word lines. Additionally, it includes forming an interlayer insulating film on the semiconductor substrate and creating a metal plug that penetrates through the interlayer insulating film, connecting to the bit line in the region where the word lines were eliminated.

Career Highlights

Naofumi Takahata has established a successful career at Spansion LLC, where he continues to innovate in the semiconductor industry. His work has been instrumental in developing technologies that enhance the performance and efficiency of flash memory devices.

Collaborations

Takahata has collaborated with notable colleagues, including Masahiko Higashi and Yukihiro Utsuno. These partnerships have contributed to the advancement of semiconductor technologies and have fostered a collaborative environment for innovation.

Conclusion

Naofumi Takahata is a key figure in the semiconductor industry, with a focus on developing advanced flash memory technologies. His contributions and collaborations highlight his commitment to innovation and excellence in his field.

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