Joetsu, Japan

Masaaki Kotake

USPTO Granted Patents = 17 

 

Average Co-Inventor Count = 4.4

ph-index = 3

Forward Citations = 26(Granted Patents)


Location History:

  • Jyoetsu, JP (2018)
  • Joetsu, JP (2017 - 2023)

Company Filing History:


Years Active: 2017-2025

where 'Filed Patents' based on already Granted Patents

17 patents (USPTO):

Title: Masaaki Kotake: Innovator in Chemically Amplified Resist Technology

Introduction

Masaaki Kotake is a prominent inventor based in Joetsu, Japan. He has made significant contributions to the field of chemically amplified resist compositions, which are crucial in the semiconductor manufacturing process. With a total of 17 patents to his name, Kotake's work has had a substantial impact on the industry.

Latest Patents

Among his latest patents are several innovative technologies. One notable patent is for a chemically amplified resist composition that includes a polymer compound with specific repeating units. This composition aims to achieve favorable resolution, pattern profile, and line edge roughness while minimizing development-residue defects. Another significant patent involves a chemically amplified negative resist composition that demonstrates high resolution during pattern formation, resulting in patterns with minimal line edge roughness.

Career Highlights

Masaaki Kotake is currently employed at Shin-Etsu Chemical Co., Ltd., a leading company in the chemical industry. His work at Shin-Etsu has allowed him to develop advanced materials that enhance the performance of photomasks and resist patterns in semiconductor fabrication.

Collaborations

Throughout his career, Kotake has collaborated with notable colleagues, including Keiichi Masunaga and Satoshi Watanabe. These collaborations have fostered innovation and contributed to the advancement of resist technology.

Conclusion

Masaaki Kotake's contributions to chemically amplified resist technology have positioned him as a key figure in the semiconductor industry. His innovative patents and collaborations continue to influence the development of advanced materials in this critical field.

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