Company Filing History:

5 out of 12,867

Advanced Micro Devices Corporation

Fujitsu Amd Semiconductor Limited

patents

4. 1 out of 24

Advance Micro Devices, Inc.

patents

5. 8 out of 832,680

Other

patents

where one patent can have more than one assignee

Years Active: 2000-2004

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14 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6750103 - NROM cell with N-less channel (2004-06-15),

2. 6602776 - Method and system for providing a polysilicon stringer monitor (2003-08-05),

3. 6583479 - Sidewall NROM and method of manufacture thereof for non-volatile memory cells (2003-06-24),

4. 6492229 - Semiconductor device having reduced field oxide recess and method of fabrication (2002-12-10),

5. 6448609 - Method and system for providing a polysilicon stringer monitor (2002-09-10),

6. 6448593 - Type-1 polysilicon electrostatic discharge transistors (2002-09-10),

7. 6429479 - Nand flash memory with specified gate oxide thickness (2002-08-06),

8. 6365945 - Submicron semiconductor device having a self-aligned channel stop region and a method for fabricating the semiconductor device using a trim and etch (2002-04-02),

9. 6346737 - Shallow trench isolation process particularly suited for high voltage circuits (2002-02-12),

10. 6329687 - Two bit flash cell with two floating gate regions (2001-12-11),

11. 6312991 - Elimination of poly cap easy poly 1 contact for NAND product (2001-11-06),

12. 6159795 - Low voltage junction and high voltage junction optimization for flash (2000-12-12),

13. 6143608 - Barrier layer decreases nitrogen contamination of peripheral gate (2000-11-07),

14. 6057193 - Elimination of poly cap for easy poly1 contact for NAND product (2000-05-02),

Title: Masaaki Higashitani: Innovator in Memory Technology

Introduction

Masaaki Higashitani is a prominent inventor based in Sunnyvale, CA (US). He has made significant contributions to the field of memory technology, holding a total of 14 patents. His innovative work has advanced the development of memory devices, particularly in the area of nitride read-only memory (NROM) cells.

Latest Patents

Higashitani's latest patents include a method of fabricating nitride read-only memory (NROM) cells and arrays. This memory device is formed on a substrate and features a pair of bit lines extending across the substrate, along with a charge-trapping layer and conductive connecting blocks. His work also includes a method and system for providing a polysilicon stringer monitor, which detects the presence of polysilicon stringers on a memory array.

Career Highlights

Throughout his career, Higashitani has worked with notable companies, including Advanced Micro Devices Corporation. His expertise in memory technology has positioned him as a key figure in the industry, contributing to advancements that enhance memory device performance.

Collaborations

Higashitani has collaborated with talented individuals such as Hao Fang and John JianShi Wang. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Masaaki Higashitani's contributions to memory technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence advancements in memory devices, showcasing the importance of innovation in technology.

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