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For the Inventor, By the Inventor

Sunnyvale, CA, United States of America

Masaaki Higashitani

This inventor holds 14 USPTO granted patents, primarily in Semiconductor Devices. Top assignees: Advanced Micro Devices Corporation, Fujitsu Corporation, Advance Micro Devices, Inc.. Active years: 2000-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masaaki Higashitani. Retrieved from https://idiyas.com/inventor/masaaki-higashitani-srd5li9m

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 14

% Patents Active = 85.7

Average Co-Inventor Count = 2.8

ph-index = 6

Forward Citations = 124(Granted Patents)


Location History:

  • Tokohama, JP (2002)
  • Sunnyvale, CA (US) (2000 - 2004)

Company Filing History:

goldMedal5 out of 13,185 
 
Advanced Micro Devices Corporation
 patents
silverMedal3 out of 39,378 
 
Fujitsu Corporation
 patents
bronzeMedal1 out of 24 
 
Advance Micro Devices, Inc.
 patents
4. 1 out of 6 
 
Fujitsu Amd Semiconductor Limited
 patents
5. 8 out of 834,601 
Other
 patents
where one patent can have more than one assignee

Years Active: 2000-2004

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Areas of Expertise:
NROM Cell
Polysilicon
Non-Volatile Memory
Semiconductor Fabrication
Flash Memory
Electrostatic Discharge
High Voltage Circuits
Channel Stop Region
Shallow Trench Isolation
Gate Oxide Thickness
Junction Optimization
Nitrogen Contamination
14 patents (USPTO):Explore Patents
1. 6750103 - NROM cell with N-less channel (2004-06-15),
2. 6602776 - Method and system for providing a polysilicon stringer monitor (2003-08-05),
3. 6583479 - Sidewall NROM and method of manufacture thereof for non-volatile memory cells (2003-06-24),
4. 6492229 - Semiconductor device having reduced field oxide recess and method of fabrication (2002-12-10),
5. 6448609 - Method and system for providing a polysilicon stringer monitor (2002-09-10),
6. 6448593 - Type-1 polysilicon electrostatic discharge transistors (2002-09-10),
7. 6429479 - Nand flash memory with specified gate oxide thickness (2002-08-06),
8. 6365945 - Submicron semiconductor device having a self-aligned channel stop region and a method for fabricating the semiconductor device using a trim and etch (2002-04-02),
9. 6346737 - Shallow trench isolation process particularly suited for high voltage circuits (2002-02-12),
10. 6329687 - Two bit flash cell with two floating gate regions (2001-12-11),
11. 6312991 - Elimination of poly cap easy poly 1 contact for NAND product (2001-11-06),
12. 6159795 - Low voltage junction and high voltage junction optimization for flash (2000-12-12),
13. 6143608 - Barrier layer decreases nitrogen contamination of peripheral gate (2000-11-07),
14. 6057193 - Elimination of poly cap for easy poly1 contact for NAND product (2000-05-02),

Title: Masaaki Higashitani: Innovator in Memory Technology

Introduction

Masaaki Higashitani is a prominent inventor based in Sunnyvale, CA (US). He has made significant contributions to the field of memory technology, holding a total of 14 patents. His innovative work has advanced the development of memory devices, particularly in the area of nitride read-only memory (NROM) cells.

Latest Patents

Higashitani's latest patents include a method of fabricating nitride read-only memory (NROM) cells and arrays. This memory device is formed on a substrate and features a pair of bit lines extending across the substrate, along with a charge-trapping layer and conductive connecting blocks. His work also includes a method and system for providing a polysilicon stringer monitor, which detects the presence of polysilicon stringers on a memory array.

Career Highlights

Throughout his career, Higashitani has worked with notable companies, including Advanced Micro Devices Corporation. His expertise in memory technology has positioned him as a key figure in the industry, contributing to advancements that enhance memory device performance.

Collaborations

Higashitani has collaborated with talented individuals such as Hao Fang and John JianShi Wang. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Masaaki Higashitani's contributions to memory technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence advancements in memory devices, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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