The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2002
Filed:
Mar. 09, 2000
Applicant:
Inventors:
K. Michael Han, San Jose, CA (US);
Hao Fang, Cupertino, CA (US);
Masaaki Higashitani, Sunnyvale, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/9788 ;
U.S. Cl.
CPC ...
H01L 2/9788 ;
Abstract
A single tunnel gate oxidation process for fabricating NAND memory strings where the gate oxide of the select transistors and the floating gate memory transistors are fabricated in a single oxidation step is disclosed. The select gate transistors and the floating gate memory transistors have an oxide thickness of 85 Å-105 Å. For single tunnel gate approach, a careful selection of the medium doped source/drain region implant conditions is necessary for proper function of the NAND memory string. In one embodiment, the medium doped source/drain region is doped with Arsenic to a concentrations of 10 /cm .