Location History:
- San Jose, CA (US) (2001 - 2002)
- Los Gatos, CA (US) (2005)
Company Filing History:
3 out of 12,901 
1 out of 832,912 Years Active: 2001-2005
Title: K Michael Han: Innovator in NAND Memory Technology
Introduction
K Michael Han is a prominent inventor based in San Jose, CA, known for his significant contributions to NAND memory technology. With a total of 4 patents, he has made strides in improving the reliability and efficiency of memory devices.
Latest Patents
One of his latest patents is titled "Recessed tunnel oxide profile for improved reliability in NAND devices." This invention focuses on enhancing the reliability and endurance of NAND-type memory cell structures. It addresses the high-risk areas for oxide breakdown and current leakage in the tunnel oxide layer by providing a controlled formation of the tunnel oxide layer. Another notable patent is "NAND flash memory with specified gate oxide thickness." This patent describes a single tunnel gate oxidation process for fabricating NAND memory strings, where the gate oxide of both the select transistors and the floating gate memory transistors is created in a single oxidation step. The oxide thickness for these transistors is specified to be between 85 Å and 105 Å.
Career Highlights
Throughout his career, K Michael Han has worked with notable companies, including Advanced Micro Devices Corporation. His work has significantly impacted the field of memory technology, particularly in the development of NAND flash memory.
Collaborations
K Michael Han has collaborated with esteemed colleagues such as Joseph G Pawletko and Narbeh Derhacobian, contributing to advancements in the field of semiconductor technology.
Conclusion
K Michael Han's innovative work in NAND memory technology has led to important advancements that enhance the reliability and efficiency of memory devices. His contributions continue to influence the industry and pave the way for future developments.