The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2003
Filed:
Oct. 16, 2000
Applicant:
Inventors:
Richard M. Fastow, Cupertino, CA (US);
Shane C. Hollmer, San Jose, CA (US);
Pau-Ling Chen, Saratoga, CA (US);
Michael Van Buskirk, Saratoga, CA (US);
Masaaki Higashitani, Sunnyvale, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/1062 ;
U.S. Cl.
CPC ...
H01L 3/1062 ;
Abstract
An non-volatile read only memory transistor for use in a memory array is disclosed. The non-volatile read only memory transistor features a substantially vertically oriented channel fabricated in a trench formed in the substrate. The channel length is dependent upon the depth of the trench and therefore a dense array of NROM transistors can be formed without adversely affecting the channel length and therefore the operational performance of the transistor.