The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2002
Filed:
Jul. 02, 1998
Applicant:
Inventors:
Masaaki Higashitani, Sunnyvale, CA (US);
Hao Fang, Cupertino, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/900 ; H01L 2/9788 ; H01L 2/358 ;
U.S. Cl.
CPC ...
H01L 2/900 ; H01L 2/9788 ; H01L 2/358 ;
Abstract
A process which includes forming trench structures ( ) in a substrate ( ) as part of both the STI isolation structure and the LOCOS/STI isolation structure. Thereafter, a field oxide ( ) is formed which simultaneously forms a portion of the STI isolation structure and a portion of the LOCOS/STI isolation structure. Consequently, three different isolation structures may be formed without requiring a substantial increase in the complexity or number of processing steps.