The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2002
Filed:
Jan. 26, 2000
Applicant:
Inventors:
Masaaki Higashitani, Sunnyvale, CA (US);
Hao Fang, Cupertino, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/902 ;
U.S. Cl.
CPC ...
H01L 2/902 ;
Abstract
The present invention provides a method and apparatus for providing a polysilicon type-1 ESD transistor in a flash memory chip. The method and apparatus include providing a select gate transistor that includes a gate, a floating gate, a medium doped junction, and a source and drain. The method and apparatus further include forming the source and drain by performing a lightly doped drain (LDD) mask and etch, performing a LDD spacer deposition and LDD spacer etch, and performing a N+ implant mask and a N+ implant.