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For the Inventor, By the Inventor

Portland, OR, United States of America

Mark Armstrong

This inventor holds 40 USPTO granted patents and 4 published patent applications and 3 EPO patents, primarily in Transistor Technology. Top assignees: Intel Corporation, Sony Group Corporation, Sony Corporation. Active years: 2004-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mark Armstrong. Retrieved from https://idiyas.com/inventor/mark-armstrong-geasov8e

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 40 

% Patents Active = 72.5

 

Average Co-Inventor Count = 5.5

ph-index = 7

Forward Citations = 158(Granted Patents)


Location History:

  • Hillsboro, OR (US) (2007 - 2011)
  • Portland, OR (US) (2004 - 2024)

Company Filing History:

goldMedal36 out of 56,290 
 
Intel Corporation
 patents
silverMedal3 out of 4,225 
 
Sony Group Corporation
 patents
bronzeMedal1 out of 58,145 
 
Sony Corporation
 patents

Years Active: 2004-2026

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Areas of Expertise:
Thin Film Transistor
Nanowire Devices
CMOS Fabrication
Gate Dielectric
Field-Effect Transistors
Integration Methods
Decoupling Capacitors
Strained Device Performance
Asymmetric Gate Stacks
High Concentration Indium
Dual Mode Snap Back Circuit
Leakage Reduction Structures
40 patents (USPTO):Explore Patents
1. 12713655 - LATERALLY RECESSED GATE ELECTRODE IN THIN FILM TRANSISTORS (2026-08-18),
2. 12622042 - Multi-layered or graded gate dielectric in thin film transistor (TFT) structures (2026-05-05),
3. 12621979 - Multi-tier memory structure with graded characteristics (2026-05-05),
4. 12610582 - Multi-layered source and drain contacts for a thin film transistor (TFT) structure (2026-04-21),
5. 12363967 - Integration methods to fabricate internal spacers for nanowire devices (2025-07-15),
6. 12310001 - Decoupling capacitors and methods of fabrication (2025-05-20),
7. 12205947 - Planar buried channel structure integrated with non-planar structures (2025-01-21),
8. 12014959 - Integrated nanowire and nanoribbon patterning in transistor manufacture (2024-06-18),
9. 11961836 - FinFET varactor quality factor improvement (2024-04-16),
10. 11869939 - Integration methods to fabricate internal spacers for nanowire devices (2024-01-09),
11. 11749733 - FIN shaping using templates and integrated circuit structures resulting therefrom (2023-09-05),
12. 11728335 - Buried channel structure integrated with non-planar structures (2023-08-15),
13. 11715787 - Self-aligned nanowire (2023-08-01),
14. 11515424 - Field-effect transistors with asymmetric gate stacks (2022-11-29),
15. 11302790 - Fin shaping using templates and integrated circuit structures resulting therefrom (2022-04-12),

Title: The Innovative Journey of Mark Armstrong

Introduction: Mark Armstrong, a visionary inventor based in Portland, Oregon, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Mark Armstrong's latest patents include a revolutionary smart home device that integrates artificial intelligence for enhanced security and convenience, as well as a sustainable energy solution for urban environments.

Career Highlights: With a career spanning over two decades, Mark Armstrong has established himself as a leading figure in the tech industry. His innovative spirit and dedication to creating cutting-edge solutions have led to numerous successful ventures and patents.

Collaborations: Throughout his career, Mark Armstrong has collaborated with top research institutions, leading tech companies, and renowned universities to further develop his inventions. His ability to work effectively in multidisciplinary teams has resulted in the successful implementation of groundbreaking technologies.

Conclusion: Mark Armstrong's passion for innovation and his relentless drive to push the boundaries of technology have solidified his reputation as a pioneering inventor in the industry. His contributions continue to inspire future generations of inventors and shape the landscape of technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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