IDiyas

For the Inventor, By the Inventor

Cupertino, CA, United States of America

Mandana Tadayoni

USPTO Granted Patents = 10 

 

Average Co-Inventor Count = 4.0

ph-index = 4

Forward Citations = 47(Granted Patents)


Company Filing History:

goldMedal10 out of 622 
 
Silicon Storage Technology, Inc.
 patents

Years Active: 2014-2017

where 'Filed Patents' based on already Granted Patents

10 patents (USPTO):
1. 9793279 - Split gate non-volatile memory cell having a floating gate, word line, erase gate, and method of manufacturing (2017-10-17),
2. 9634020 - Method of making embedded memory device with silicon-on-insulator substrate (2017-04-25),
3. 9570581 - Method of forming a self-aligned stack gate structure for use in a non-volatile memory array (2017-02-14),
4. 9431407 - Method of making embedded memory device with silicon-on-insulator substrate (2016-08-30),
5. 9330922 - Self-aligned stack gate structure for use in a non-volatile memory array and a method of forming such structure (2016-05-03),
6. 9306039 - Method of making split-gate memory cell with substrate stressor region (2016-04-05),
7. 9245638 - Method of operating a split gate flash memory cell with coupling gate (2016-01-26),
8. 9018690 - Split-gate memory cell with substrate stressor region, and method of making same (2015-04-28),
9. 8785307 - Method of forming a memory cell by reducing diffusion of dopants under a gate (2014-07-22),
10. 8711636 - Method of operating a split gate flash memory cell with coupling gate (2014-04-29),

Title: The Innovative Mind of Mandana Tadayoni: Pioneering Memory Technologies.

Introduction:

Mandana Tadayoni, a prolific inventor based in Cupertino, CA (US), has left an indelible mark on the tech industry with his groundbreaking contributions to memory technology. With a portfolio boasting 10 patents, Tadayoni continues to push the boundaries of innovation in the field.

Latest Patents:

Among his latest patents is the 'Split gate non-volatile memory cell' which features a complex design including a floating gate, word line, and erase gate. This cutting-edge memory device showcases Tadayoni's expertise in optimizing semiconductor substrates for enhanced performance. Another notable invention is the 'Method of making embedded memory device with silicon-on-insulator substrate', demonstrating his proficiency in integrating memory cells and logic devices on the same platform.

Career Highlights:

Tadayoni is a valued member of Silicon Storage Technology, Inc., a key player in the semiconductor industry. His role in developing innovative memory solutions has solidified his reputation as a trailblazer in the field. Tadayoni's dedication to driving technological advancements is evident in his patent portfolio, which reflects his commitment to excellence.

Collaborations:

Working alongside talented individuals such as Nhan Do and Henry A Om'Mani, Tadayoni has nurtured a collaborative environment where ideas flourish and innovation thrives. These partnerships have been instrumental in bringing his visionary concepts to life, shaping the future of memory technologies.

Conclusion:

In conclusion, Mandana Tadayoni stands as a beacon of innovation in the realm of memory technology. His relentless pursuit of excellence and unwavering commitment to pushing the boundaries of what is possible have earned him a well-deserved place among the tech industry's leading inventors. Tadayoni's contributions will continue to inspire future generations of innovators to push the limits of what technology can achieve.

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