The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2014
Filed:
Aug. 23, 2012
Xian Liu, Sunnyvale, CA (US);
Mandana Tadayoni, Cupertino, CA (US);
Chien-sheng Su, Saratoga, CA (US);
Nhan DO, Saratoga, CA (US);
Xian Liu, Sunnyvale, CA (US);
Mandana Tadayoni, Cupertino, CA (US);
Chien-Sheng Su, Saratoga, CA (US);
Nhan Do, Saratoga, CA (US);
Silicon Storage Technology, Inc., San Jose, CA (US);
Abstract
A method of forming a memory cell includes forming a conductive floating gate over the substrate, forming a conductive control gate over the floating gate, forming a conductive erase gate laterally to one side of the floating gate and forming a conductive select gate laterally to an opposite side of the one side of the floating gate. After the forming of the floating and select gates, the method includes implanting a dopant into a portion of a channel region underneath the select gate using an implant process that injects the dopant at an angle with respect to a surface of the substrate that is less than ninety degrees and greater than zero degrees.