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For the Inventor, By the Inventor

Akishima, Japan

Makoto Morino

This inventor holds 26 USPTO granted patents, primarily in Semiconductor Memory Devices. Top assignees: Hitachi, Ltd., Hitachi Vlsi Engineering Corp., Hitachi Ulsi Systems Co., Ltd.. Active years: 1990-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Makoto Morino. Retrieved from https://idiyas.com/inventor/makoto-morino

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26

% Patents Active = 73.1

Average Co-Inventor Count = 9.6

ph-index = 10

Forward Citations = 324(Granted Patents)


Location History:

  • Tachikawa, JP (2005)
  • Akishima, JP (1990 - 2009)
  • Tokyo, JP (2005 - 2020)

Company Filing History:

goldMedal21 out of 42,726 
 
Hitachi, Ltd.
 patents
silverMedal8 out of 182 
 
Hitachi Vlsi Engineering Corp.
 patents
bronzeMedal5 out of 336 
 
Hitachi Ulsi Systems Co., Ltd.
 patents
4. 3 out of 87 
 
Hitachi Ulsi Engineering Corp.
 patents
5. 2 out of 1,458 
 
Elpida Memory, Inc.
 patents
6. 1 out of 3 
 
Hiachi, Ltd.
 patents
7. 1 out of 26 
 
Hitachi Hokkai Semiconductor Ltd.
 patents
8. 1 out of 39,176 
 
Micron Technology Incorporated
 patents
9. 3 out of 834,453 
Other
 patents
where one patent can have more than one assignee

Years Active: 1990-2020

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Areas of Expertise:
Semiconductor Memory
Error Correction Code
Defect Remedying
Voltage Generation
Dynamic RAM
Integrated Circuits
Charge Trapping
Redundancy Circuits
Memory Systems
Transistors
Zigzag Bonding Pad
Boosted Potential
26 patents (USPTO):Explore Patents
1. 10833087 - Semiconductor devices including transistors comprising a charge trapping material, and related systems and methods (2020-11-10),
2. 7499340 - Semiconductor memory device and defect remedying method thereof (2009-03-03),
3. 7345929 - Semiconductor memory device and defect remedying method thereof (2008-03-18),
4. 7203101 - Semiconductor memory device and defect remedying method thereof (2007-04-10),
5. 7016236 - Semiconductor memory device and defect remedying method thereof (2006-03-21),
6. 6954386 - Boosted potential generation circuit and control method (2005-10-11),
7. 6915476 - Redundancy semiconductor memory device with error correction code (ECC) circuits for correcting errors in recovery fuse data (2005-07-05),
8. 6898130 - Semiconductor memory device and defect remedying method thereof (2005-05-24),
9. 6657901 - Semiconductor device formed in a rectangle region on a semiconductor substrate including a voltage generating circuit (2003-12-02),
10. 6633508 - Semiconductor memory device and memory system (2003-10-14),
11. 6515913 - Semiconductor memory device and defect remedying method thereof (2003-02-04),
12. 6335884 - Semiconductor memory device and defect remedying method thereof (2002-01-01),
13. 6282141 - Semiconductor memory device and memory system (2001-08-28),
14. 6212089 - Semiconductor memory device and defect remedying method thereof (2001-04-03),
15. 6160744 - Semiconductor memory device and defect remedying method thereof (2000-12-12),

Title: The Innovative Journey of Makoto Morino

Introduction: Makoto Morino is a renowned inventor hailing from Akishima, Japan, known for his groundbreaking contributions to various technological fields.

Latest Patents: Makoto Morino holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his continuous commitment to innovation.

Career Highlights: With over two decades of experience in the tech industry, Morino has worked with leading research institutions and universities to develop cutting-edge solutions that have revolutionized the way we interact with technology.

Collaborations: Throughout his career, Makoto Morino has collaborated with top companies in Japan and internationally, fostering a culture of innovation and knowledge sharing that has led to significant advancements in the field.

Conclusion: Makoto Morino's passion for pushing the boundaries of technology and his relentless pursuit of innovation make him a true pioneer in the world of inventions, inspiring the next generation of inventors to dream big and create a better future.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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