The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2005
Filed:
Feb. 20, 2003
Seiji Narui, Tokyo, JP;
Kenji Mae, Fussa, JP;
Makoto Morino, Tachikawa, JP;
Shuichi Kubouchi, Fussa, JP;
Seiji Narui, Tokyo, JP;
Kenji Mae, Fussa, JP;
Makoto Morino, Tachikawa, JP;
Shuichi Kubouchi, Fussa, JP;
Elpida Memory, Inc., Tokyo, JP;
Hitachi ULSI Systems Co., Ltd., Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A boosted potential generation circuit enables a high-speed operation and even miniaturization in a semiconductor memory even if external power supply voltage is reduced in the semiconductor memory. In the boosted potential generation circuit provided with a capacitor MOS transistor and a transfer MOS transistor and used for a DRAM including memory cells, a gate insulating film of the capacitor MOS transistor is thinner than that of the MOS transistor constituting the memory cell to realize a boosted potential generation circuit which has a small area and a large capacity. In this case, preferably, the gate insulating film of the transfer MOS transistor has a thickness which is not greater than that of the gate insulating film of the capacitor MOS transistor.