Lynne A Okada

This inventor holds 37 USPTO granted patents, primarily in Integrated Circuit Technology. Top assignee: Advanced Micro Devices Corporation. Active years: 2001-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lynne A Okada. Retrieved from https://idiyas.com/inventor/lynne-a-okada

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 37

% Patents Active = 78.4

Average Co-Inventor Count = 3.2

ph-index = 12

Forward Citations = 353(Granted Patents)

Company Filing History:

37 out of 13,200

Advanced Micro Devices Corporation

patents

Years Active: 2001-2007

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Areas of Expertise:

Integrated Circuit

Dual Damascene

Low-k Dielectric

Plasma Etching

Photoresist

Interconnect Structure

Dielectric Layer

CVD Organic BARC

Hydrogen Doping

Carrier Gas Modification

Vapor Treatment

Silicon Carbide

37 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7279410 - Method for forming inlaid structures for IC interconnections (2007-10-09),

2. 7256499 - Ultra low dielectric constant integrated circuit system (2007-08-14),

3. 7208418 - Sealing sidewall pores in low-k dielectrics (2007-04-24),

4. 7001840 - Interconnect with multiple layers of conductive material with grain boundary between the layers (2006-02-21),

5. 6872663 - Method for reworking a multi-layer photoresist following an underlayer development (2005-03-29),

6. 6846749 - N-containing plasma etch process with reduced resist poisoning (2005-01-25),

7. 6767827 - Method for forming dual inlaid structures for IC interconnections (2004-07-27),

8. 6756300 - Method for forming dual damascene interconnect structure (2004-06-29),

9. 6713382 - Vapor treatment for repairing damage of low-k dielectric (2004-03-30),

10. 6699792 - Polymer spacers for creating small geometry space and method of manufacture thereof (2004-03-02),

11. 6660619 - Dual damascene metal interconnect structure with dielectric studs (2003-12-09),

12. 6656830 - Dual damascene with silicon carbide middle etch stop layer/ARC (2003-12-02),

13. 6632707 - Method for forming an interconnect structure using a CVD organic BARC to mitigate via poisoning (2003-10-14),

14. 6610608 - Plasma etching using combination of CHF3 and CH3F (2003-08-26),

15. 6603206 - Slot via filled dual damascene interconnect structure without middle etch stop layer (2003-08-05),

Title: **Lynne A. Okada: Innovator in Integrated Circuit Technology**

Introduction

Lynne A. Okada is a prominent inventor based in Sunnyvale, California, with an impressive portfolio of 37 patents to his name. His contributions to the field of integrated circuits are notable, reflecting his commitment to advancing technology through innovative solutions.

Latest Patents

One of Lynne's latest patents, titled "Method for Forming Inlaid Structures for IC Interconnections," describes a sophisticated approach to creating inlaid interconnect structures for integrated circuits (ICs). This method leverages an etch stop layer, which allows for precise opening and layering of materials, ultimately leading to the formation of conductive pathways for efficiency in IC operation. This patent emphasizes the layering and etching processes that protect the underlying substrate while enhancing the performance of integrated circuits.

Another significant patent is for an "Ultra Low Dielectric Constant Integrated Circuit System." In this innovation, Lynne developed a porous ultra-low dielectric constant dielectric layer designed to improve the electrical properties of semiconductor devices. The integration of a dielectric liner and a barrier layer ensures that the delicate openings in the dielectric are well-protected, further enhancing the functionality and efficiency of the ICs.

Career Highlights

Lynne A. Okada's career at Advanced Micro Devices Corporation has been marked by significant technological advancements in semiconductor design. His work has positioned him as a key player in the development of next-generation integrated circuits, significantly impacting the industry.

Collaborations

Throughout his career, Lynne has collaborated with other talented individuals, including Fei Wang and Calvin T. Gabriel. These partnerships have fostered innovation and have led to breakthroughs in the technologies that power modern electronics.

Conclusion

Lynne A. Okada exemplifies the spirit of innovation within the field of integrated circuit technology. Through his numerous patents and collaborative efforts, Lynne continues to shape the future of technology, making significant contributions that enhance the performance and reliability of semiconductor devices. His work at Advanced Micro Devices Corporation stands as a testament to his dedication and expertise in this ever-evolving field.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]