The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2007
Filed:
Sep. 19, 2005
LU You, San Jose, CA (US);
Fei Wang, San Jose, CA (US);
Minh Quoc Tran, Milpitas, CA (US);
Lynne A. Okada, Sunnyvale, CA (US);
Lu You, San Jose, CA (US);
Fei Wang, San Jose, CA (US);
Minh Quoc Tran, Milpitas, CA (US);
Lynne A. Okada, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
An integrated circuit is provided including forming a porous ultra-low dielectric constant dielectric layer over a semiconductor substrate and forming an opening in the ultra-low dielectric constant dielectric layer. A dielectric liner is formed to line the opening to cover the pores in the ultra-low dielectric constant dielectric layer and a barrier layer is deposited to line the dielectric liner and conductor core is deposited to fill the opening over the barrier layer.