The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2003
Filed:
Jan. 29, 2002
Applicant:
Inventors:
Suzette K. Pangrle, Cupertino, CA (US);
Lynne A. Okada, Sunnyvale, CA (US);
Fei Wang, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ;
Abstract
A method for forming a dual damascene conductive line and conductive plug using porous low k dielectric materials in the via and trench layers. The via layer is provided with dense low k dielectric plugs that increase the mechanical strength of the porous low k dielectric layer that forms the via layer. A via fill technique etches some of the dielectric plugs in the via layer and fills them with conductive material. The via fill technique reduces the damage done to the via holes in the via layer caused by photoresist removal processes.