The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2005
Filed:
Jun. 25, 2001
Applicants:
Calvin T. Gabriel, Cupertino, CA (US);
Lynne A. Okada, Sunnyvale, CA (US);
Ramkumar Subramanian, San Jose, CA (US);
Inventors:
Calvin T. Gabriel, Cupertino, CA (US);
Lynne A. Okada, Sunnyvale, CA (US);
Ramkumar Subramanian, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21302 ;
U.S. Cl.
CPC ...
Abstract
A method for forming a metal interconnect comprises exposing a dielectric layer to an etch chemistry containing nitrogen-containing compound such as NH, NFor NO. The nitrogen-containing compound provides selectivity and/or profile control comparable to that provided by N, while avoiding poisoning of photoresist by embedded N.