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For the Inventor, By the Inventor

Suwon-si, South Korea

Kwang-soo Seol

USPTO Granted Patents = 16 

Average Co-Inventor Count = 4.2

ph-index = 5

Forward Citations = 48(Granted Patents)


Location History:

  • Suwon-si-si, KR (2011)
  • Suwon-si, KR (2009 - 2012)

Company Filing History:

goldMedal16 out of 131,744 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2009-2012

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16 patents (USPTO):Explore Patents
1. 8320186 - Method of operating nonvolatile memory device (2012-11-27),
2. 8062978 - Crystalline aluminum oxide layers having increased energy band gap, charge trap layer devices including crystalline aluminum oxide layers, and methods of manufacturing the same (2011-11-22),
3. 8054359 - Image sensor with sensing transistor having two gates and method of operating the same (2011-11-08),
4. 8053366 - Al-doped charge trap layer and non-volatile memory device including the same (2011-11-08),
5. 8043952 - Method of forming aluminum oxide layer and method of manufacturing charge trap memory device using the same (2011-10-25),
6. 8018781 - Method of operating nonvolatile memory device (2011-09-13),
7. 8000150 - Method of programming memory device (2011-08-16),
8. 7998804 - Nonvolatile memory device including nano dot and method of fabricating the same (2011-08-16),
9. 7929349 - Method of operating nonvolatile memory device (2011-04-19),
10. 7907452 - Non-volatile memory cell programming method (2011-03-15),
11. 7838422 - Al-doped charge trap layer, non-volatile memory device and methods of fabricating the same (2010-11-23),
12. 7795159 - Charge trap layer for a charge trap semiconductor memory device and method of manufacturing the same (2010-09-14),
13. 7732855 - Semiconductor memory device including recessed control gate electrode (2010-06-08),
14. 7675786 - Method of operating a semiconductor memory device having a recessed control gate electrode (2010-03-09),
15. 7668016 - Non-volatile memory devices and programming methods thereof including moving electrons through pad oxide layers between charge trap layers (2010-02-23),

Title: Kwang-soo Seol: Innovator in Nonvolatile Memory Technology

Introduction

Kwang-soo Seol is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of nonvolatile memory devices, holding a total of 16 patents. His innovative work has advanced the technology used in memory devices, making them more efficient and effective.

Latest Patents

One of his latest patents is a method of operating a nonvolatile memory device. This method involves performing a programming operation or an erase operation by applying a composite pulse that includes a direct current (DC) pulse and an AC perturbation pulse. This innovative approach enhances the functionality of nonvolatile memory devices. Another notable patent focuses on crystalline aluminum oxide layers that have an increased energy band gap. This patent includes charge trap memory devices and methods of manufacturing these layers, which are crucial for improving memory device performance.

Career Highlights

Kwang-soo Seol is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to be at the forefront of memory technology innovations. His contributions have not only advanced the company's product offerings but have also set new standards in the industry.

Collaborations

Throughout his career, Kwang-soo Seol has collaborated with notable colleagues, including Sang-jin Park and Sang-Moo Choi. These collaborations have fostered a creative environment that has led to groundbreaking advancements in memory technology.

Conclusion

Kwang-soo Seol's contributions to nonvolatile memory technology are significant and impactful. His innovative patents and work at Samsung Electronics Co., Ltd. highlight his role as a leading inventor in the field. His ongoing efforts continue to shape the future of memory devices.

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