The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2011
Filed:
Apr. 17, 2008
Sang-jin Park, Pyeongtaek-si, KR;
Kwang-soo Seol, Suwon-si, KR;
Sang-jin Park, Pyeongtaek-si, KR;
Kwang-soo Seol, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A non-volatile memory cell programming method of programming 2-bit data in a memory cell having 4 threshold voltage distributions may include a first program operation of programming a first bit of the 2-bit data in the memory cell by applying a first programming voltage to the memory cell; a second program operation of programming a second bit of the 2-bit data in the memory cell by applying a second programming voltage to the memory cell; and a stabilization operation of applying a stabilization voltage having an electric field opposite in polarity to an electric field formed by the first and second programming voltages to the memory cell after one of the first and second program operations that corresponds to a higher one of the first and second programming voltages is performed.