The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2011
Filed:
Jul. 31, 2008
Sang-moo Choi, Yongin-si, KR;
Jung-hun Sung, Yongin-si, KR;
Kwang-soo Seol, Suwon-si, KR;
Woong-chul Shin, Daejeon, KR;
Sang-jin Park, Pyeongtaek-si, KR;
Sang-moo Choi, Yongin-si, KR;
Jung-hun Sung, Yongin-si, KR;
Kwang-soo Seol, Suwon-si, KR;
Woong-chul Shin, Daejeon, KR;
Sang-jin Park, Pyeongtaek-si, KR;
Samsung Electronics Co., Inc., Gyeonggi-Do, KR;
Abstract
Crystalline aluminum oxide layers having increased energy band gap, charge trap memory devices including crystalline aluminum oxide layers and methods of manufacturing the same are provided. A method of forming an aluminum oxide layer having an increased energy band gap includes forming an amorphous aluminum oxide layer on a lower film, introducing hydrogen (H) or hydroxyl group (OH) into the amorphous aluminum oxide layer, and crystallizing the amorphous aluminum oxide layer including the H or OH.