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For the Inventor, By the Inventor

Suwon-si, South Korea

Woong-chul Shin

USPTO Granted Patents = 9

Average Co-Inventor Count = 2.9

ph-index = 3

Forward Citations = 41(Granted Patents)


Location History:

  • Yongin-si, KR (2010 - 2011)
  • Daejeon, KR (2010 - 2011)
  • Suwon-si, KR (2009 - 2013)

Company Filing History:

goldMedal9 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2009-2013

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9 patents (USPTO):
1. 8445318 - Phase change memory devices including phase change layer formed by selective growth methods and methods of manufacturing the same (2013-05-21),
2. 8062978 - Crystalline aluminum oxide layers having increased energy band gap, charge trap layer devices including crystalline aluminum oxide layers, and methods of manufacturing the same (2011-11-22),
3. 8043952 - Method of forming aluminum oxide layer and method of manufacturing charge trap memory device using the same (2011-10-25),
4. 8003162 - Method of forming phase change layer using a germanium precursor and method of manufacturing phase change memory device using the same (2011-08-23),
5. 7902048 - Method of forming a phase change layer and method of manufacturing a storage node having the phase change layer (2011-03-08),
6. 7754586 - Method of surface treating a phase change layer and method of manufacturing a phase change memory device using the same (2010-07-13),
7. 7668016 - Non-volatile memory devices and programming methods thereof including moving electrons through pad oxide layers between charge trap layers (2010-02-23),
8. 7655940 - Storage node including diffusion barrier layer, phase change memory device having the same and methods of manufacturing the same (2010-02-02),
9. 7572662 - Method of fabricating phase change RAM including a fullerene layer (2009-08-11),
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