The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
May. 22, 2008
Sang-moo Choi, Yongin-si, KR;
Kwang-soo Seol, Suwon-si-si, KR;
Woong-chul Shin, Daejeon, KR;
Sang-jin Park, Pyeongtaek-si-si, KR;
Eun-ha Lee, Seoul, KR;
Jung-hun Sung, Yongin-si, KR;
Sang-moo Choi, Yongin-si, KR;
Kwang-soo Seol, Suwon-si-si, KR;
Woong-chul Shin, Daejeon, KR;
Sang-jin Park, Pyeongtaek-si-si, KR;
Eun-ha Lee, Seoul, KR;
Jung-hun Sung, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided is a method of forming an aluminum oxide layer and a method of manufacturing a charge trap memory device using the same. The method of forming an aluminum oxide layer may include forming an amorphous aluminum oxide layer on an underlying layer, forming a crystalline auxiliary layer on the amorphous aluminum oxide layer, and crystallizing the amorphous aluminum oxide layer. Forming the crystalline auxiliary layer may include forming an amorphous auxiliary layer on the amorphous aluminum oxide layer; and crystallizing the amorphous auxiliary layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile