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For the Inventor, By the Inventor

Yongin, South Korea

Jung-hun Sung

This inventor holds 11 USPTO granted patents and 1 published patent application. Top assignees: Samsung Electronics Co., Ltd., Seoul National University. Active years: 2010-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jung-hun Sung. Retrieved from https://idiyas.com/inventor/jung-hun-sung

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 11 

% Patents Active = 81.8

Average Co-Inventor Count = 4.4

ph-index = 4

Forward Citations = 44(Granted Patents)


Company Filing History:

goldMedal11 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal1 out of 1,784 
 
Seoul National University
 patents
where one patent can have more than one assignee

Years Active: 2010-2014

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11 patents (USPTO):Explore Patents
1. 8823078 - Non-volatile memory device having stacked structure, and memory card and electronic system including the same (2014-09-02),
2. 8674475 - Antifuse and methods of operating and manufacturing the same (2014-03-18),
3. 8385122 - Non-volatile memory device having stacked structure, and memory card and electronic system including the same (2013-02-26),
4. 8062978 - Crystalline aluminum oxide layers having increased energy band gap, charge trap layer devices including crystalline aluminum oxide layers, and methods of manufacturing the same (2011-11-22),
5. 8043952 - Method of forming aluminum oxide layer and method of manufacturing charge trap memory device using the same (2011-10-25),
6. 7929330 - Multi-bit memory device using multi-plug (2011-04-19),
7. 7760551 - Method of programming nonvolatile memory device (2010-07-20),
8. 7751254 - Method of programming non-volatile memory device (2010-07-06),
9. 7675779 - Non-volatile memory devices and methods of operating the same (2010-03-09),
10. 7672167 - Non-volatile memory device (2010-03-02),
11. 7668016 - Non-volatile memory devices and programming methods thereof including moving electrons through pad oxide layers between charge trap layers (2010-02-23),

Title: Innovations of Jung-hun Sung

Introduction

Jung-hun Sung is a prominent inventor based in Yongin-si, South Korea. He has made significant contributions to the field of non-volatile memory devices, holding a total of 11 patents. His work has been instrumental in advancing technology in memory storage solutions.

Latest Patents

Among his latest patents are innovations such as a non-volatile memory device having a stacked structure, and a memory card and electronic system that includes the same. This non-volatile memory device features a substrate and a stacked NAND cell array, which consists of at least one NAND set. Each NAND set includes multiple NAND strings that are vertically stacked on the substrate. Additionally, at least one signal line is arranged on the substrate to be commonly coupled with the NAND set. Another notable patent involves antifuse technology, which includes methods of operating and manufacturing antifuses. This antifuse consists of first and second conductors that are separate from each other, a dielectric layer positioned between them, and a diffusion layer that connects one of the conductors to the dielectric layer.

Career Highlights

Jung-hun Sung has worked with leading organizations such as Samsung Electronics and Seoul National University. His experience in these prestigious institutions has allowed him to develop cutting-edge technologies that have a lasting impact on the industry.

Collaborations

He has collaborated with notable colleagues, including Sang-Moo Choi and Sang-jin Park, contributing to various innovative projects and research initiatives.

Conclusion

Jung-hun Sung's contributions to the field of memory technology are noteworthy, and his patents reflect his commitment to innovation. His work continues to influence advancements in non-volatile memory devices, showcasing his role as a leading inventor in this domain.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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