The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2010

Filed:

Sep. 10, 2008
Applicants:

Sang-jin Park, Pyeongtaek-si, KR;

Kwang-soo Seol, Yongin-si, KR;

Ki-hwan Choi, Seongnam-si, KR;

Jung-hun Sung, Yongin-si, KR;

Sang-moo Choi, Yongin-si, KR;

Inventors:

Sang-jin Park, Pyeongtaek-si, KR;

Kwang-soo Seol, Yongin-si, KR;

Ki-hwan Choi, Seongnam-si, KR;

Jung-hun Sung, Yongin-si, KR;

Sang-moo Choi, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of programming a nonvolatile memory device may include applying a program voltage to a memory cell. A supplementary pulse may be applied to the memory cell to facilitate thermalization of charges after the application of the program voltage. A recovery voltage may be applied to the memory cell after the application of the supplementary pulse. A program state of the memory cell may be verified using a verification voltage after the application of the recovery voltage.


Find Patent Forward Citations

Park, Sang-jin. (2010). Method of programming nonvolatile memory device (U.S. Patent No. 7760551). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7760551

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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