The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2010
Filed:
Jun. 19, 2008
Sang-jin Park, Pyeongtaek-si, KR;
Kwang-soo Seol, Yongin-si, KR;
Jung-hun Sung, Yongin-si, KR;
Samsung Electronic Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of programming a non-volatile memory device may include performing a first programming operation including applying a program voltage to a memory cell and verifying the memory cell using a first verification voltage. A perturbation pulse may be applied to the memory cell to facilitate thermalization of charges in the memory cell if the memory cell passes the verification using the first verification voltage. The memory cell may be verified using a second verification voltage greater than the first verification voltage after the perturbation pulse is applied.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile