The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Apr. 15, 2008
Jung-hun Sung, Yongin-si, KR;
Ju-hee Park, Guri-si, KR;
Jung-hun Sung, Yongin-si, KR;
Ju-hee Park, Guri-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A non-volatile memory device may include at least one string, at least one bit line corresponding to the at least one string, and/or a sensing transistor. The at least one string may include a plurality of memory cell transistors connected in series. The sensing transistor may include a gate configured to sense a voltage of the corresponding bit line. A threshold voltage of the sensing transistor may be higher than a voltage obtained by subtracting a given voltage from a voltage applied to read the corresponding bit line connected to a memory cell transistor to be read of the plurality of memory cell transistors.