The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2010
Filed:
Jan. 25, 2008
Won-joo Kim, Hwaseong-si, KR;
Yoon-dong Park, Yongin-si, KR;
Seung-hoon Lee, Seoul, KR;
Suk-pil Kim, Yongin-si, KR;
Jae-woong Hyun, Uijeongbu-si, KR;
Jung-hun Sung, Yongin-si, KR;
Tae-hee Lee, Yongin-si, KR;
Won-joo Kim, Hwaseong-si, KR;
Yoon-dong Park, Yongin-si, KR;
Seung-hoon Lee, Seoul, KR;
Suk-pil Kim, Yongin-si, KR;
Jae-woong Hyun, Uijeongbu-si, KR;
Jung-hun Sung, Yongin-si, KR;
Tae-hee Lee, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A non-volatile memory device includes memory transistors disposed on a semiconductor substrate in a NAND string. A string select transistor is disposed at a first end of the NAND string, and a ground select transistor is disposed at a second end of the NAN string. Bit lines are electrically connected to the semiconductor substrate outside of the string select transistor and a gate electrode of the ground select transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile