The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Sep. 17, 2010
Eun-ha Lee, Seoul, KR;
Hlon-suck Baik, Cheonan-si, KR;
Kwang-soo Seol, Suwon-si, KR;
Sang-jin Park, Yongin-si, KR;
Jong-bong Park, Suwon-si, KR;
Min-ho Yang, Suwon-si, KR;
Eun-ha Lee, Seoul, KR;
Hlon-suck Baik, Cheonan-si, KR;
Kwang-soo Seol, Suwon-si, KR;
Sang-jin Park, Yongin-si, KR;
Jong-bong Park, Suwon-si, KR;
Min-ho Yang, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided is an aluminum (Al) doped charge trap layer, a non-volatile memory device and methods of fabricating the same. The charge trap layer may include a plurality of silicon nano dots that trap charges and a silicon oxide layer that covers the silicon nano dots, wherein the charge trap layer is doped with aluminum (Al). The non-volatile memory device may include a substrate including a source and a drain on separate regions of the substrate, a tunneling film on the substrate contacting the source and the drain, the charge trap layer according to example embodiments, a blocking film on the charge trap layer, and a gate electrode on the blocking film.