Location History:
- Gyeonggi-do, KR (2006 - 2009)
- Suwon-si, KR (2010 - 2011)
Company Filing History:
8 out of 131,611 
2 out of 42,496 
1 out of 1 
Years Active: 2006-2011
Title: Innovations of Jong-bong Park
Introduction
Jong-bong Park is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on advancements in non-volatile memory devices and methods for fabricating semiconductor devices.
Latest Patents
One of his latest patents is related to an aluminum (Al) doped charge trap layer and a non-volatile memory device that incorporates this technology. This invention provides a charge trap layer that includes a plurality of silicon nano dots designed to trap charges, covered by a silicon oxide layer. The charge trap layer is doped with aluminum, enhancing its performance in non-volatile memory devices. Another significant patent involves methods of fabricating channel-stressed semiconductor devices. This method includes forming a capping layer over the source and drain regions of a PMOS device and treating a stress memorization layer to induce tensile stress in the channel region of an adjacent NMOS device.
Career Highlights
Jong-bong Park has worked with prominent companies in the technology sector, including Samsung Electronics and Hitachi. His experience in these leading firms has contributed to his expertise in semiconductor innovations.
Collaborations
He has collaborated with notable colleagues such as Hion-suck Baik and Gyeong-su Park, further enhancing his contributions to the field.
Conclusion
Jong-bong Park's innovative work in semiconductor technology and his numerous patents highlight his significant impact on the industry. His advancements continue to influence the development of non-volatile memory devices and fabrication methods.