The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2009
Filed:
Feb. 09, 2006
Applicants:
Jun-soo Bae, Gyeonggi-do, KR;
Jong-bong Park, Gyeonggi-do, KR;
Inventors:
Jun-Soo Bae, Gyeonggi-do, KR;
Jong-Bong Park, Gyeonggi-do, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of forming a magnetic memory device include oxidizing a top magnetic layer using a conductive capping pattern as a mask. An etch selectivity between an oxidized portion of the top magnetic layer and a tunnel barrier layer may be relatively high. Using the tunnel barrier layer as an etch-stop layer, the oxidized portion of the top magnetic layer is selectively removed to form a top magnetic pattern, and to expose at least a portion of opposite sidewalls of the top magnetic pattern and the tunnel barrier layer. The unoxidized portion of the top magnetic layer forms a top magnetic pattern.