The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2006
Filed:
Jan. 14, 2005
Gyeong-su Park, Gyeonggi-do, KR;
Kazutoshi Kaji, Hitachi, JP;
Jong-bong Park, Gyeonggi-do, KR;
Shohei Terada, Hitachi, JP;
Tatsumi Hirano, Hitachi, JP;
Se-ahn Song, Seoul, KR;
Gyeong-su Park, Gyeonggi-do, KR;
Kazutoshi Kaji, Hitachi, JP;
Jong-bong Park, Gyeonggi-do, KR;
Shohei Terada, Hitachi, JP;
Tatsumi Hirano, Hitachi, JP;
Se-ahn Song, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hitachi, Ltd., Tokyo, JP;
Hitachi High-Technologies Co., Tokyo, JP;
Abstract
A standard sample for transmission electron microscopy (TEM) elemental mapping and a TEM elemental mapping method using the same are provided. The standard sample includes a substrate; a first crystalline thin film containing heavy atoms formed on the substrate; a first amorphous thin film having oxides or nitrides containing light atoms and having a thickness of 1–5 nm or 6–10 nm formed on the first crystalline thin film; a second crystalline thin film containing heavy atoms formed on the first amorphous thin film. The standard sample can be used to correct TEM, EDS and EELS mapping results of a multi-layered nanometer-sized thin film and to optimize mapping conditions.