The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2011
Filed:
Dec. 22, 2008
Sang-jin Park, Yongin-si, KR;
Myoung-jae Lee, Suwon-si, KR;
Young-kwan Cha, Suwon-si, KR;
Sun-ae Seo, Hwaseong-si, KR;
Kyung-sang Cho, Gwacheon-si, KR;
Kwang-soo Seol, Suwon-si, KR;
Sang-Jin Park, Yongin-si, KR;
Myoung-Jae Lee, Suwon-si, KR;
Young-Kwan Cha, Suwon-si, KR;
Sun-Ae Seo, Hwaseong-si, KR;
Kyung-Sang Cho, Gwacheon-si, KR;
Kwang-Soo Seol, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A nonvolatile memory device including a nano dot and a method of fabricating the same are provided. The nonvolatile memory device may include a lower electrode, an oxide layer on the lower electrode, a nano dot in the oxide layer and an upper electrode on the oxide layer. In example embodiments, the current paths inside the oxide layer may be unified, thereby stabilizing the reset current.