Yongin-si, South Korea

Young-Kwan Cha



Average Co-Inventor Count = 5.0

ph-index = 4

Forward Citations = 62(Granted Patents)


Location History:

  • Yongin-si, KR (2008 - 2011)
  • Suwon-si, KR (2008 - 2011)

Company Filing History:


Years Active: 2008-2011

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11 patents (USPTO):Explore Patents

Title: Young-Kwan Cha: Innovator in Nonvolatile Memory Technology

Introduction

Young-Kwan Cha is a prominent inventor based in Yongin-si, South Korea. He has made significant contributions to the field of nonvolatile memory devices, holding a total of 11 patents. His work focuses on enhancing the performance and stability of memory technologies, which are crucial for modern electronic devices.

Latest Patents

Among his latest patents, Young-Kwan Cha has developed a nonvolatile memory device that includes a nano dot and a method for fabricating it. This innovative device features a lower electrode, an oxide layer, a nano dot within the oxide layer, and an upper electrode. The design aims to unify current paths inside the oxide layer, thereby stabilizing the reset current. Another notable patent involves a nonvolatile memory device that comprises a lower electrode, a resistor structure, a middle electrode, a diode structure, and an upper electrode. This invention also includes methods for manufacturing both the nonvolatile memory device and an array of such devices.

Career Highlights

Young-Kwan Cha is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of memory technology. His expertise and innovative approach have positioned him as a key player in the development of advanced memory solutions.

Collaborations

He has collaborated with notable colleagues, including Myoung-jae Lee and Sun-ae Seo, contributing to various projects that enhance the capabilities of nonvolatile memory devices.

Conclusion

Young-Kwan Cha's contributions to the field of nonvolatile memory technology are significant and impactful. His innovative patents and work at Samsung Electronics Co., Ltd. continue to shape the future of memory devices.

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