The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2009
Filed:
Feb. 09, 2007
Sang-jin Park, Yongin-si, KR;
Young-soo Park, Suwon-si, KR;
Sang-min Shin, Seoul, KR;
Young-kwan Cha, Suwon-si, KR;
Sang-Jin Park, Yongin-si, KR;
Young-Soo Park, Suwon-si, KR;
Sang-Min Shin, Seoul, KR;
Young-Kwan Cha, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A memory device and method for operating the same are provided. The example method may be directed to a method of performing a memory operation on a memory device, and may include applying a negative voltage bias to the memory device during a programming operation of the memory device and applying a positive voltage bias to the memory device during an erasing operation of the memory device. The example memory device may include a substrate and a gate structure formed on the substrate, the gate structure exhibiting a faster flat band voltage shift under a negative voltage bias than under a positive voltage bias, the gate structure receiving a negative voltage bias during a programming of the memory device and receiving a positive voltage bias during an erasing operation of the memory device.